DMS3012SFG
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
100
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
1.5
7.3
10
30
0.45
2.5
10
15
0.55
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 13.5A
V GS = 4.5V, I D = 11A
V DS = 5V, I D = 10.0A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
0.26
1296
415
204
1.6
14.7
31.6
3.5
5.0
15.8
27.8
29.7
13.6
13.1
4.3
4310
2.6
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 10V, I D = 13.5A
V GS = 10V, V DS = 15V,
R G = 3 ? , I D = 8.8A
I F = 13.5A, di/dt = 100A/ μ s
I F = 13.5A, di/dt = 100A/ μ s
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30
V GS = 4.5V
30
25
25
V DS = 5V
20
V GS = 4.0V
20
15
10
5
V GS = 3.5V
V GS = 3.0V
V GS = 2.0V
V GS = 2.5V
15
10
5
V GS = 150°C
V GS = 125°C
V GS = 85°C
V GS = 25°C
V GS = -55°C
0
0
0.5 1 1.5
2
0
1.0
1.5 2.0 2.5
3.0
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
POWERDI is a registered trademark of Diodes Incorporated.
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
DMS3012SFG
Document number: DS35441 Rev. 7 - 2
4 of 8
www.diodes.com
October 2012
? Diodes Incorporated
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